Description
The FM21L16 is a 128Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or FRAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make FRAM superior to other types of memory.

FEATUREs
2Mbit Ferroelectric Nonvolatile RAM
• Organized as 128Kx16
• Configurable as 256Kx8 Using /UB, /LB
• 1014 Read/Write Cycles
• NoDelay™ Writes
• Page Mode Operation to 40MHz
• Advanced High-Reliability Ferroelectric Process

SRAM Compatible
• Industry Std. 128Kx16 SRAM Pinout
• 60 ns Access Time, 110 ns Cycle Time

Advanced Features
• Low VDD Monitor Protects Memory against
   Inadvertent Writes
• Software Programmable Block Write Protect

Superior to Battery-backed SRAM Modules
• No Battery Concerns
• Monolithic Reliability
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration

Low Power Operation
• 2.7V – 3.6V Power Supply
• Low Current Mode (5µA) using ZZ pin
• 18 mA Active Current

Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 44-pin “Green”/RoHS TSOP-II package