Description
The FM24C512 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
512Kbit Ferroelectric Nonvolatile RAM
• Organized as 65,536 x 8 bits
• High Endurance 10 Billion (1010) Read/Writes
• 45 year Data Retention
• NoDelay Writes
• Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface
• Up to 1 MHz Maximum Bus Frequency
• Supports Legacy Timing for 100 kHz & 400 kHz

Low Power Operation
• 5V Operation
• 250 μA Active Current (100 kHz)
• 120 μA Standby Current

Industry Standard Configuration
• Industrial Temperature -40 °C to +85 °C
• 8-pin Green /RoHS EIAJ SOIC Package