Description
   The FM24CL04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
4K bit Ferroelectric Nonvolatile RAM
• Organized as 512 x 8 bits
• High Endurance 1014 Read/Writes
• 38 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface
• Up to 1 MHz maximum bus frequency
• Direct hardware replacement for EEPROM
• Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation
• 2.7V to 3.65V operation
• 100 µA Active Current (100 kHz)
• 3 µA (typ.) Standby Current

Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 8-pin “Green”/RoHS SOIC (-G)