Description
The FM24V02 is a 256Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
256K bit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• High Endurance 100 Trillion (1014) Read/Writes
• 10 year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface
• Up to 3.4 MHz maximum bus frequency
• Direct hardware replacement for EEPROM
• Supports legacy timing for 100 kHz & 400 kHz

Device ID and Serial Number
• Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power Operation
• Low Voltage Operation 2.0V – 3.6V
• Active Current < 150 μA (typ. @ 100KHz)
• 90 μA Standby Current (typ.)
• 5 μA Sleep Mode Current (typ.)

Industry Standard Configuration
• Industrial Temperature -40°C to +85 °C
• 8-pin “Green”/RoHS SOIC Package