Functional Description
The FM24V02A is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
■ 256-Kbit ferroelectric random access memory (F-RAM)
   logically organized as 32K × 8
   ❐ High-endurance 100 trillion (1014) read/writes
   ❐ 151-year data retention (See the Data Retention and
      Endurance table)
   ❐ NoDelay™ writes
   ❐ Advanced high-reliability ferroelectric process
■ Fast two-wire serial interface (I2C)
   ❐ Up to 3.4-MHz frequency[1]
   ❐ Direct hardware replacement for serial EEPROM
   ❐ Supports legacy timings for 100 kHz and 400 kHz
■ Device ID
   ❐ Manufacturer ID and Product ID
■ Low power consumption
   ❐ 175-μA active current at 100 kHz
   ❐ 150-μA standby current
   ❐ 8-μA sleep mode current
■ Low-voltage operation: VDD = 2.0 V to 3.6 V
■ Industrial temperature: –40 °C to +85 °C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant