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FM25040B(2013_02) Hoja de datos - Cypress Semiconductor

FM25040B image

Número de pieza
FM25040B

Other PDF
  2012   lastest PDF  

PDF
DOWNLOAD     

page
14 Pages

File Size
368.4 kB

Fabricante
Cypress
Cypress Semiconductor Cypress

Description
   The FM25040B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.


FEATUREs
4K bit Ferroelectric Nonvolatile RAM
• Organized as 512 x 8 bits
• High Endurance 10 Trillion (1013) Read/Writes
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Fast Serial Peripheral Interface - SPI
• Up to 14 MHz maximum Bus Frequency
• Direct hardware replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Sophisticated Write Protection Scheme
• Hardware Protection
• Software Protection

Low Power Consumption
• 10 μA Standby Current (+85°C)

Industry Standard Configuration
• Automotive Temperature -40°C to +125°C
   o Qualified to AEC Q100 Specification
• “Green”/RoHS 8-pin SOIC


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