Description
The  FM25V02  is  a  256-kilobit  nonvolatile  memory employing  an  advanced  ferroelectric  process.  A
ferroelectric  random  access  memory  or  F-RAM  is nonvolatile  and  performs  reads  and  writes  like  a
RAM. It provides reliable data retention for 10 years while  eliminating  the  complexities,  overhead,  and
system  level  reliability  problems  caused  by  Serial Flash and other nonvolatile memories.

FEATUREs
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10¹⁴) Read/Writes
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme
Hardware Protection
Software Protection

Device ID
Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power
Low Voltage Operation 2.0V – 3.6V
90  A Standby Current (typ.)
5  A Sleep Mode Current (typ.)

Industry Standard Configurations
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC Package
8-pin “Green”/RoHS TDFN Package