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FP1189-G Hoja de datos - WJ Communications => Triquint

FP1189 image

Número de pieza
FP1189-G

componentes Descripción

Other PDF
  no available.

PDF
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page
11 Pages

File Size
384.8 kB

Fabricante
WJ
WJ Communications => Triquint WJ

Product Description
The  FP1189  is  a  high  performance  ½-Watt  HFET (Heterostructure  FET)  in  a  low-cost  SOT-89  surface mount  package.   This  device  works  optimally  at  a  drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance  and  an  output  power  of  +27  dBm  at  1-dB compression, while providing 20.5 dB gain at 900 MHz.

Product Features
•  50 – 4000 MHz
•  +27 dBm P1dB
•  +40 dBm Output IP3
•  High Drain Efficiency
•  20.5 dB Gain @ 900 MHz
•  Lead-free/Green/RoHS compliantSOT-89 Package
•  MTTF >100 Years

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
1 Watt HFET
Ver
Unspecified
1 watt HFET
Ver
WJ Communications => Triquint
1 - Watt HFET
Ver
WJ Communications => Triquint
½-Watt HFET ( Rev : 2006 )
Ver
WJ Communications => Triquint
½ - Watt HFET
Ver
WJ Communications => Triquint
½-Watt HFET
Ver
Unspecified
½-Watt HFET ( Rev : 2003 )
Ver
WJ Communications => Triquint
0.05-3 GHz, 2 Watt GaAs HFET
Ver
Unspecified
0.05-3 GHz, 2 Watt GaAs HFET
Ver
Sirenza Microdevices => RFMD
DC-10 GHz, 1 Watt AIGaAs/GaAs HFET
Ver
Stanford Microdevices

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