General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has bl.

FEATUREs
• -3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability