General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
FEATUREs
• 2.8A, 200V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 5.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability