Número de pieza
FQPF6N80CT
Fabricante
![Fairchild](/logo/Fairchild.png)
Fairchild Semiconductor
![Fairchild](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FEATUREs
• 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 8 pF)
• 100% Avalanche Tested
Número de pieza
componentes Descripción
PDF
Fabricante
N-Channel QFET® MOSFET 300 V, 5.5 A, 700 mΩ
Fairchild Semiconductor
N-Channel QFET® MOSFET 300 V, 5.5 A, 700 mΩ ( Rev : 2013 )
Fairchild Semiconductor
N-Channel PowerTrench® MOSFET 100 V, 144 A, 5.5 mΩ
ON Semiconductor
N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω ( Rev : 2014 )
Fairchild Semiconductor
N-Channel QFET® MOSFET 800 V, 3.9 A, 3.6 Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω
ON Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ
Fairchild Semiconductor
N-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Fairchild Semiconductor
N-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Fairchild Semiconductor