Description
This  N-Channel  enhancement  mode  power  MOSFET  is produced using Fairchild Semiconductor’s proprietary planar stripe  and  DMOS  technology.  This  advanced  MOSFET technology  has  been  especially  tailored  to  reduce  on-state resistance,  and  to  provide  superior  switching  performance and  high  avalanche  energy  strength.  These  devices  are suitable  for  switched  mode  power  supplies,  active  power factor correction (PFC), and electronic lamp ballasts.

FEATUREs
• 6.0 A, 900 V, RDS(on)= 2.3 Ω(Max.) @ VGS= 10 V,ID= 3.0 A
• Low Gate Charge (Typ. 30nC)
• Low Crss (Typ. 11pF)
• 100% Avalanche Tested