Features
• Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates high-density mounting.
• The FX851 is formed with 2 chips, one being equivalent to the 2SJ187 and the other the SB07-03P, placed in one package.