FZT789A(1995) Hoja de datos - Diodes Incorporated.
Número de pieza
FZT789A
componentes Descripción
Other PDF
PDF
page
2 Pages
File Size
83.9 kB
Fabricante
Diodes Incorporated.
FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A
* Gain of 200 at IC=2 Amps and very low saturation voltage
APPLICATIONS
* Battery powered circuits, fast charge converters
COMPLEMENTARY TYPE - FZT689B
PARTMARKING DETAIL - FZT789A
Número de pieza
componentes Descripción
PDF
Fabricante
SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1995 )
Diodes Incorporated.
SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : V2 )
Diodes Incorporated.
SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ( Rev : 1995 )
Diodes Incorporated.
SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1995 )
Diodes Incorporated.
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