Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

FEATUREs
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 2.1 V (typ.) @ IC = 25 A
• 5 μs minimum short circuit withstand time at TJ = 150 °C
• Safe paralleling
• Low thermal resistance
• Very fast recovery antiparallel diode

APPLICATIONs
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• High frequency converters