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G25N120H3(2014) Hoja de datos - Infineon Technologies

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Número de pieza
G25N120H3

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16 Pages

File Size
1.9 MB

Fabricante
Infineon
Infineon Technologies Infineon

High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120


FEATUREs:
TRENCHSTOPTM technology offering
• best in class switching performance: less than 500µJ total switching losses achievable
• very low VCEsat
• low EMI
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models: //www.infineon.com/igbt/


APPLICATIONs:
• solar inverters
• uninterruptible power supplies
• welding converters
• converters with high switching frequency

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