Features
• 225°C maximum operating temperature
• Gate Oxide Free SiC Switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Coefficient of RDS,ON
• Suitable for Connecting an Anti-parallel Diode

Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth

APPLICATIONs
• Down Hole Oil Drilling
• Geothermal Instrumentation
• Solenoid Actuators
• General Purpose High-Temperature Switching
• Amplifiers
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)