GB20SHT06-CAU(2012) Hoja de datos - GeneSiC Semiconductor, Inc.
Número de pieza
GB20SHT06-CAU
componentes Descripción
Other PDF
PDF
page
3 Pages
File Size
205.8 kB
Fabricante
GeneSiC Semiconductor, Inc.
Features
• 650 V Schottky rectifier
• 250 °C maximum operating temperature
• Temperature independent switching behavior
• Superior surge current capability
• Positive temperature coefficient of VF
• Extremely fast switching speeds
• Superior figure of merit QC/IF
Número de pieza
componentes Descripción
PDF
Fabricante
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2014 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
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