GK001T Hoja de datos - SANYO -> Panasonic
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GK001T
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SANYO -> Panasonic
Features
• Adoption of process GTBT (Grounded-Trench-MOS assisted Bipolar-mode Field Effect Transistor).
• High breakdown voltage and high reliablity.
• High speed switching.
• Wide ASO.
• Low saturation voltage, low On resistance : RCE(sat)=280mΩ (at 1A).
• High hFE (typ : 1000).
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