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GP10NB60S Hoja de datos - STMicroelectronics

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Número de pieza
GP10NB60S

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13 Pages

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309.6 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow erMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency appli cations (<1kHz).

■ HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN)
■ VERY LOW ON-VOLTAGE DROP( Vcesat )
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT


APPLICATIONS
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL

 

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Número de pieza
componentes Descripción
PDF
Fabricante
N-CHANNEL 10A - 600V - TO-220FP PowerMesh™ IGBT
Ver
STMicroelectronics
N-CHANNEL 10A - 600V - TO-220FP PowerMesh™ IGBT
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STMicroelectronics
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
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STMicroelectronics
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH™ IGBT
Ver
STMicroelectronics
N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH™ IGBT
Ver
STMicroelectronics
N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESH™ IGBT
Ver
STMicroelectronics
N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH™ IGBT
Ver
STMicroelectronics
N-CHANNEL 600V - 0.53Ω - 10A TO-220 / TO-220FP Zener-Protected SuperMESH™ MOSFET ( Rev : 2005 )
Ver
STMicroelectronics
N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH™ IGBT
Ver
STMicroelectronics
MOSFET, N CH, 600V, 10A, TO-220FP-3
Ver
ON Semiconductor

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