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GP200MKS12 Hoja de datos - Dynex Semiconductor

GP200MKS12 image

Número de pieza
GP200MKS12

componentes Descripción

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page
10 Pages

File Size
117.7 kB

Fabricante
Dynex
Dynex Semiconductor Dynex

The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The module incoporates high current rated freewheel diodes. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.


FEATURES
■ Internally Configured With Upper Arm Controlled
■ Non Punch Through Silicon
■ Isolated Copper Baseplate
■ Low Inductance Internal Construction


APPLICATIONS
■ High Power Choppers
■ Motor Controllers
■ Induction Heating
■ Resonant Converters
■ Power Supplies

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