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GP350MHB06S Hoja de datos - Dynex Semiconductor

GP350MHB06S image

Número de pieza
GP350MHB06S

componentes Descripción

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page
10 Pages

File Size
118.3 kB

Fabricante
Dynex
Dynex Semiconductor Dynex

The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.


FEATURES
■ n - Channel
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base


APPLICATIONS
■ PWM Motor Control
■ UPS

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Número de pieza
componentes Descripción
PDF
Fabricante
Half Bridge IGBT Module ( Rev : 2004 )
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Half Bridge IGBT Module
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“HALF-BRIDGE” IGBT MODULE
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Half Bridge IGBT Module
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Half Bridge IGBT Module
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Dynex Semiconductor
Half Bridge IGBT Module
Ver
Dynex Semiconductor
Half Bridge IGBT Module
Ver
Dynex Semiconductor
“HALF-BRIDGE” IGBT Module
Ver
SemiWell Semiconductor
“HALF-BRIDGE” IGBT MODULE
Ver
SemiWell Semiconductor
Half Bridge IGBT Module
Ver
Dynex Semiconductor

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