The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

FEATURES
■ n - Channel
■ Enhancement Mode
■ High Input Impedance
■ Optimised For High Power High Frequency Operation
■ Isolated Base
■ Ultra Low VCE(sat)
■ 400A Per Module

APPLICATIONS
■ High Power Switching
■ Motor Control
■ Inverters
■ Traction Systems
■ Lower Loss Systems Retrofits