GT15Q311 Hoja de datos - Toshiba
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GT15Q311
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Toshiba
High Power Switching Applications
Motor Control Applications
• The 3rd generation
• Enhancement-mode
• High speed: tf = 0.32 µs (max)
• Low saturation voltage: VCE (sat) = 2.7 V (max)
• FRD included between emitter and collector
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
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