H7N0307AB Hoja de datos - Renesas Electronics
Número de pieza
H7N0307AB
componentes Descripción
Other PDF
no available.
PDF
page
7 Pages
File Size
77.6 kB
Fabricante
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
FEATUREs
• Low on-resistance
RDS (on)= 4.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Número de pieza
componentes Descripción
PDF
Fabricante
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
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