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H9435S Hoja de datos - Hi-Sincerity Microelectronics

H9435S image

Número de pieza

H9435S

componentes Descripción

P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)

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37.3 kB

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Hi-Sincerity Microelectronics

Hi-Sincerity

Features
• R_DS(on)=60mΩ@V_GS=-10V, I_D=-5.3A
• R_DS(on)=90mΩ@V_GS=-4.5V, I_D=-4.2A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM

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Número de pieza

componentes Descripción

PDF

Fabricante

30V P-Channel Enhancement Mode MOSFET

Unspecified

30V P-CHANNEL ENHANCEMENT MODE MOSFET

ZP Semiconductor

30V P-CHANNEL ENHANCEMENT MODE MOSFET

ZP Semiconductor

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated.

30V P-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2016 )

Diodes Incorporated.

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated.

-30V P+P-Channel Enhancement Mode MOSFET

TECH PUBLIC Electronics co LTD

30V P-Channel Enhancement Mode MOSFET

Formosa Technology

30V P-Channel Enhancement Mode MOSFET

Shenzhen Jin Yu Semiconductor Co., Ltd.

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