DESCRIPTION
HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.
HCF40109B contains four low-to-high voltage level shifting circuits.

■ INDIPENDENCE OF POWER SUPPLY SEQUENCE CONSIDERATIONS - VCC CAN EXCEED VDD, INPUT SIGNALS CAN EXCEED BOTH VCC AND VDD
■ UP AND DOWN LEVEL SHIFTING CAPABILITY
■ THREE-STATE OUTPUTS WITH SEPARATE ENABLE CONTROLS
■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
■ QUIESCENT CURRENT SPECIFIED UP TO 20V
■ 5V, 10V, AND 15V PARAMETRIC RATINGS
■ INPUT LEAKAGE CURRENT
   II = 100nA (MAX) AT VDD = 18V TA = 25°C
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"