DESCRIPTION
VS-HFA04TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A continuous current, the VS-HFA04TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs.

FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating temperature
• Meets MSL level 1, per J-STD-020, LF maximum
   peak of 260 °C
• Halogen-free according to IEC 61249-2-21
   definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified

BenefitS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count