datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Inchange Semiconductor  >>> HG2N60-220F PDF

HG2N60-220F Hoja de datos - Inchange Semiconductor

HG2N60-220F image

Número de pieza
HG2N60-220F

componentes Descripción

Other PDF
  no available.

PDF
DOWNLOAD     

page
2 Pages

File Size
132.3 kB

Fabricante
Iscsemi
Inchange Semiconductor Iscsemi

• DESCRITION
• High efficiency switch mode power supply.
   Charger
   UPS power supply.

• FEATURES
• Drain Current –ID= 2A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 600V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 4.5Ω (Max)
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements


Número de pieza
componentes Descripción
PDF
Fabricante
N-channel mosfet transistor
Ver
Inchange Semiconductor
N-Channel Mosfet Transistor
Ver
Inchange Semiconductor
N-Channel Mosfet Transistor
Ver
Inchange Semiconductor
N-Channel Mosfet Transistor
Ver
Inchange Semiconductor
N-Channel Mosfet Transistor
Ver
Inchange Semiconductor
N-Channel Mosfet Transistor
Ver
New Jersey Semiconductor
N-Channel Mosfet Transistor
Ver
Inchange Semiconductor
N-Channel Mosfet Transistor
Ver
Inchange Semiconductor
N-Channel Mosfet Transistor
Ver
Inchange Semiconductor
N-Channel Mosfet Transistor
Ver
Inchange Semiconductor

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]