The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.This device has been optimized for high frequency switch mode power supplies.

FEATUREs
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.Fairchildsemi.com