Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.

FEATUREs
• 6A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1.0µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance

APPLICATIONs
• Power Supplies
• Motor Drives
• Protective Circuits