[Shenzhen Huazhimei Semiconductor Co., Ltd]

DESCRIPTION
HM1P10MR is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. 

FEATURE
● -100V/-0.8.0A, RDS(ON) = 650m-ohm (Typ.)
                                            @VGS = -10V
● -60V/-0.4A, RDS(ON) = 700m-ohm
                                            @VGS = -4.5V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and maximum
   DC current capability
● SOT-23 package design