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HM6409AE Hoja de datos - Shenzhen Huazhimei Semiconductor Co., Ltd

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HM6409AE

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HMSEMI
Shenzhen Huazhimei Semiconductor Co., Ltd HMSEMI

VDS= -20V
RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73mΩ
RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54mΩ
RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43mΩ


FEATUREs
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions


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