General Description
The HmC-AlH509 is a three stage GaAs HemT mmiC low Noise Amplifier (lNA) which operates between 71 and 86 GHz. The HmC-AlH509 features 14 dB of small signal gain, 5 dB of noise figure and an output power of +7 dBm at 1dB compression from a +2V supply voltage. All bond pads and the die backside are Ti/Au metallized. This versatile lNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for mCm and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with rf probes.

FEATUREs
   Noise figure: 5 dB
   p1dB: +7 dBm
   Gain: 14 dB
   supply Voltage: +2V
   50 Ohm matched input/Output
   Die size: 3.20 x 1.60 x 0.1 mm

Typical Applications
This HmC-AlH509 is ideal for:
• short Haul / High Capacity links
• Automotive radar
• e-Band Communication systems
• Test & measurement