HN1A01FE(2007) Hoja de datos - Toshiba
Número de pieza
HN1A01FE
componentes Descripción
Other PDF
PDF
page
3 Pages
File Size
185.9 kB
Fabricante
Toshiba
Audio Frequency General Purpose Amplifier Applications
● Small package (Dual type)
● High voltage and high current : VCEO = −50V, IC = −150mA (max)
● High hFE: hFE = 120~400
● Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2007 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Share Link: