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HY62256A Hoja de datos - Hynix Semiconductor

HY62256A image

Número de pieza
HY62256A

componentes Descripción

Other PDF
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PDF
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page
14 Pages

File Size
815.9 kB

Fabricante
Hynix
Hynix Semiconductor Hynix

Description
The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundais high performance CMOS process technology. The HY62256A/HY62256A-I
has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. The HY62256A/HY62256A-I is suitable for use in low voltage operation and battery back-up application.


FEATUREs
·Fully static operation and Tri-state outputs
·TTL compatible inputs and outputs
·Low power consumption
-2.0V(min.) data retention
·Standard pin configuration
-28 pin 600 mil PDIP
-28 pin 330 mil SOP
-28 pin 8x13.4 mm
TSOP-1 (standard and reversed)

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Número de pieza
componentes Descripción
PDF
Fabricante
32Kx8bit CMOS SRAM
Ver
Hynix Semiconductor
32Kx8bit CMOS SRAM
Ver
Hyundai Micro Electronics
128Kx8bit CMOS SRAM
Ver
Hynix Semiconductor
5V 8Kx8 CMOS SRAM
Ver
Alliance Semiconductor
5V 8Kx8 CMOS SRAM ( Rev : 2002 )
Ver
Alliance Semiconductor
5V 8Kx8 CMOS SRAM
Ver
Alliance Semiconductor
CMOS SRAM 256K-BIT(32KX8)
Ver
Unspecified
3.3V 512K × 8 CMOS SRAM
Ver
Alliance Semiconductor
2K x 8 CMOS SRAM
Ver
Unspecified
1K x 4 CMOS SRAM
Ver
UMC Corporation

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