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HYB39S16800AT-10 Hoja de datos - Siemens AG

HYB39S16160AT-10 image

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HYB39S16800AT-10

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The HYB 39S1640x/80x/16xAT are dual bank Synchronous DRAM’s based on the die revisions “B” and “C” and organized as 2 banks×2MBit×4, 2 banks×1MBit×8 and 2 banks×512 kBit×16 respectively.

These synchronous devices achieve high speed data transfer rates up to 125 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with SIEMENS advanced 16 MBit DRAM process technology.

 

HYB39S16800AT-10

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SYNCHRONOUS DRAM
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Micron Technology
SYNCHRONOUS DRAM
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Micron Technology
SYNCHRONOUS DRAM
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Micron Technology
SYNCHRONOUS DRAM
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Micron Technology
SYNCHRONOUS DRAM
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Micron Technology
SYNCHRONOUS DRAM ( Rev : 2002 )
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Micron Technology
SYNCHRONOUS DRAM
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Micron Technology
SYNCHRONOUS DRAM
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Micron Technology
SYNCHRONOUS DRAM ( Rev : V2 )
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Micron Technology
Synchronous DRAM
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Micron Technology

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