4M × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

The HYM 324000GD -50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 32-bit in a 72-pin, dual read-out, small outline package comprising two HYB 3165160T 4M × 16 DRAMs in 500 mil wide TSOPII-54 - packages mounted together with two 0.2 µF ceramic decoupling capacitors on a PC board. Each HYB 3165160T is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed.

Preliminary Information
• 4 0194 034 words by 32-bit organization
• Fast access and cycle time
   50 ns access time
   95 ns cycle time (-50 version)
   60 ns access time
   110 ns cycle time (-60 version)
• Fast page mode capability with
   35 ns cycle time (-50 version)
   40 ns cycle time (-60 version)
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
   max. 1008 mW active (-50 version)
   max. 864 mW active (-60 version)
   LVCMOS – 1.8 mW standby
   TTL – 14.4 mW standby
• CAS-before-RAS refresh, RAS-only-refresh. Self Refresh
• 2 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin, dual read-out, one bank, Small Outline DIMM Module
• Utilizes two 4M × 16 -DRAMs (HYB 3165160T)
• 4096 refresh cycles / 64 ms
• Gold contact pad