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HYM721000GS-60- Hoja de datos - Siemens AG

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HYM721000GS-60-

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Siemens
Siemens AG Siemens

1M × 72-Bit Dynamic RAM Module (ECC - Module)

The HYM 721000GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 514400BT 1M × 4 DRAMs in 300 mil wide TSOPII - packages mounted together with eighteen 0.2 µF ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four BiCMOS 8-bit buffers/line drivers.

Advanced Information
• 1 048 576 words by 72-bit ECC - mode organization
• Fast access and cycle time
   60 ns access time
   110 ns cycle time (-60 version)
   70 ns access time
   130 ns cycle time (-70 version)
• Fast page mode capability with
   40 ns cycle time (-60 version)
   45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
   max. 10890 mW active (-60 version)
   max. 9900 mW active (-70 version)
   CMOS – 451 mW standby
   TTL – 550 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• 18 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes eighteen 1M × 4 -DRAMs in TSOPII-packages and four BiCMOS 8-bit buffers/line drivers 74ABT244
• Two versions: HYM 721000GS with TSOPII-components (4.06 mm module thickness)
                          HYM 721010GS with SOJ-components (8.89 mm module thickness)
• 1024 refresh cycles / 16 ms
• Gold contact pad
• double sided module with 25.35 mm (1000 mil) height

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