Description
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

FEATUREs
● Lead free and Green Device Available
● Low Rds-on to Minimize Conductive Loss
● High avalanche Current
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test

APPLICATIONs
● Power Supply
● DC-DC Converters
● Full Bridge Control