6th Generation CoolSiC™ 650V SiC Schottky Diode

The CoolSiC™ generation ч ҙGчҚ is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VFҚ. The CoolSiC™ Schottky diode чцс V Gч has been designed to complement our чсс V and чцс V CoolMOS™ ш families, meeting the most stringent application requirements in this voltage range.

FEATUREs
• Best in class forward voltage (1.25 V)
• Best in class figure of merit (Qc x VF)
• High dv/dt ruggedness (150 V/ns)

Benefits
• System efficiency improvement
• System cost and size savings due to the reduced cooling requirements
• Enabling higher frequency and increased power density

Potential Applications
• Power factor correction in SMPS
• Solar inverter
• Uninterruptible power supply