Número de pieza
IDT71V35761S183BQ
Fabricante
Integrated Device Technology
Description
The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.
FEATUREs
◆128K x 36, 256K x 18 memory configurations
◆Supports high system speed:
Commercial:
– 200MHz 3.1ns clock access time
Commercial and Industrial:
– 183MHz 3.3ns clock access time
– 166MHz 3.5ns clock access time
◆LBOinput selects interleaved or linear burst mode
◆Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)
◆3.3V core power supply
◆Power down controlled by ZZ input
◆3.3V I/O
◆Optional - Boundary Scan JTAG Interface (IEEE 1149.1 compliant)
◆Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array
Número de pieza
componentes Descripción
PDF
Fabricante
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs ( Rev : 2015 )
Integrated Device Technology
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs
Integrated Device Technology
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs ( Rev : 2004 )
Integrated Device Technology
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs
Integrated Device Technology
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs
Integrated Device Technology
128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs
Integrated Device Technology
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
Integrated Silicon Solution
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINED, SINGLE-CYCLE DESELECT STATIC RAM ( Rev : 2002 )
Integrated Silicon Solution
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINED, SINGLE-CYCLE DESELECT STATIC RAM
Integrated Silicon Solution
32K x 32 CacheRAM™ 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect
Integrated Device Technology