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IGP30N60T Hoja de datos - Infineon Technologies

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Número de pieza
IGP30N60T

Other PDF
  2009  

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page
12 Pages

File Size
372.4 kB

Fabricante
Infineon
Infineon Technologies Infineon

Low Loss IGBT in Trench and Fieldstop technology

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
    - Frequency Converters
    - Uninterruptible Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
    - very high switching speed
    - low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

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Low Loss IGBT in Trench and Fieldstop technology
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Unspecified
Low Loss IGBT in Trench and Fieldstop technology
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Infineon Technologies
Low Loss IGBT in Trench and Fieldstop technology
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Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
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Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology ( Rev : 2015 )
Ver
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Ver
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Ver
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology ( Rev : 2015 )
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology ( Rev : 2006 )
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology
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Unspecified

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