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IGW50N60T Hoja de datos - Infineon Technologies

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IGW50N60T

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  2009   2015  

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13 Pages

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Infineon
Infineon Technologies Infineon

Low Loss IGBT in Trench and Fieldstop technology

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
    - Frequency Converters
    - Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
    - very high switching speed
    - low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

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Low Loss IGBT in Trench and Fieldstop technology
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Unspecified
Low Loss IGBT in Trench and Fieldstop technology
Ver
Infineon Technologies
Low Loss IGBT in Trench and Fieldstop technology
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop and Fieldstop technology ( Rev : 2009 )
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Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
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Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology ( Rev : 2015 )
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Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Ver
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology ( Rev : 2006 )
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology
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Unspecified

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