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IHW30N60T Hoja de datos - Infineon Technologies

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Número de pieza
IHW30N60T

Other PDF
  2006   2008  

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12 Pages

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538.4 kB

Fabricante
Infineon
Infineon Technologies Infineon

Features:
• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5μs
• TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
   - very tight parameter distribution
   - high ruggedness, temperature stable behavior
   - low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


APPLICATIONs:
• Inductive Cooking
• Soft Switching Applications


Número de pieza
componentes Descripción
PDF
Fabricante
Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode
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Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode ( Rev : 2006 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode ( Rev : 2006 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2008 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel diode
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Infineon Technologies
Low Loss IGBT in Trench and Fieldstop technology
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Unspecified
Low Loss IGBT in Trench and Fieldstop technology
Ver
Infineon Technologies
Low Loss IGBT in Trench and Fieldstop technology
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop and Fieldstop technology ( Rev : 2009 )
Ver
Infineon Technologies

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