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IHW30N60T(2006) Hoja de datos - Infineon Technologies

IHW30N60T image

Número de pieza
IHW30N60T

Other PDF
  2008   lastest PDF  

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page
12 Pages

File Size
366 kB

Fabricante
Infineon
Infineon Technologies Infineon

Features:
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop and Fieldstop® technology for 600 V applications
   offers :
      - very tight parameter distribution
      - high ruggedness, temperature stable behavior
      - low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


APPLICATIONs:
• Inductive Cooking
• Soft Switching Applications


Número de pieza
componentes Descripción
PDF
Fabricante
Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode ( Rev : 2006 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode ( Rev : 2006 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2008 )
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology ( Rev : 2006 )
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology
Ver
Unspecified
Low Loss IGBT in TrenchStop® and Fieldstop technology
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology ( Rev : 2007 )
Ver
Infineon Technologies
Low Loss IGBT in TrenchStop® and Fieldstop technology ( Rev : 2009 )
Ver
Infineon Technologies

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