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IKW20N60T(2013) Hoja de datos - Infineon Technologies

IKW20N60T image

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IKW20N60T

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  2008   lastest PDF  

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14 Pages

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739.5 kB

Fabricante
Infineon
Infineon Technologies Infineon

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5 μs
• Designed for :
   - Frequency Converters
   - Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications
   offers :
      - very tight parameter distribution
      - high ruggedness, temperature stable behavior
      - very high switching speed
      - low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


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Fabricante
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ( Rev : 2013 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ( Rev : 2016 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ( Rev : 2013 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ( Rev : 2013 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ( Rev : 2013 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ( Rev : 2015 )
Ver
Infineon Technologies
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ( Rev : 2013 )
Ver
Infineon Technologies

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