IKW30N60H3 Hoja de datos - Infineon Technologies
Número de pieza
IKW30N60H3
componentes Descripción
Other PDF
PDF
page
16 Pages
File Size
1.7 MB
Fabricante
Infineon Technologies
Features:
TRENCHSTOP™ technology offering
• very low VCEsat
• low EMI
• Very soft, fast recovery anti-parallel diode
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models
APPLICATIONs:
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
Número de pieza
componentes Descripción
PDF
Fabricante
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode ( Rev : 2010 )
Infineon Technologies
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
Infineon Technologies
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
Infineon Technologies
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode ( Rev : 2010 )
Infineon Technologies
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Unspecified
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Unspecified
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Infineon Technologies
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2006 )
Infineon Technologies
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Infineon Technologies
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