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IPD090N03LGE8177 Hoja de datos - Infineon Technologies

IPD090N03LGE8177 image

Número de pieza
IPD090N03LGE8177

componentes Descripción

Other PDF
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page
9 Pages

File Size
715.5 kB

Fabricante
Infineon
Infineon Technologies Infineon

OptiMOS™3 Power-Transistor


FEATUREs
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating

Page Link's: 1  2  3  4  5  6  7  8  9 

Número de pieza
componentes Descripción
PDF
Fabricante
TO-3 POWER TRANSISTOR SOCKET
Ver
Unspecified
OptiMOS™3 Power-Transistor ( Rev : 2009 )
Ver
Infineon Technologies
OptiMOS™3 Power-Transistor ( Rev : 2013 )
Ver
Infineon Technologies
OptiMOS™3 Power-Transistor ( Rev : 2009 )
Ver
Infineon Technologies
OptiMOS™3 Power-Transistor
Ver
Infineon Technologies
OptiMOS™3 Power-Transistor ( Rev : 2010 )
Ver
Infineon Technologies
OptiMOS™3 Power-Transistor
Ver
Infineon Technologies
OptiMOS™3 Power-Transistor
Ver
Infineon Technologies
OptiMOS™3 Power-Transistor
Ver
Infineon Technologies
OptiMOS™3 Power-Transistor
Ver
Infineon Technologies

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