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IPD65R225C7(2020) Hoja de datos - Infineon Technologies

IPD65R225C7 image

Número de pieza
IPD65R225C7

componentes Descripción

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page
14 Pages

File Size
650 kB

Fabricante
Infineon
Infineon Technologies Infineon

650V CoolMOS™ C7 Power Device

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation.


FEATUREs
• Increased MOSFET dv/dt ruggedness
• Better efficiency due to lowest in market FOM RDS(on) *Eoss and RDS(on)*Qg
• Best in class RDS(on) in TO220/TO247/DPAK and D2PAK
• Easy to use/drive
• Pb-free plating, Halogen free mold compound


Benefits
• Enabling higher system efficiency
• Enabling higher frequency/increased power density solutions
• System cost/size savings due to reduced cooling requirements
• Higher system reliability due to lower operating temperatures

Potential applications
   PFC stages and hard switching PWM stages for e.g. Computing, Server,
   Telecom, UPS and Solar.


Número de pieza
componentes Descripción
PDF
Fabricante
650V CoolMOS™ C7 Power Device
Ver
Infineon Technologies
650V CoolMOS™ C7 Power Device ( Rev : 2020 )
Ver
Infineon Technologies
650V CoolMOS™ C7 Power Device
Ver
Infineon Technologies
650V CoolMOS™ C7 Power Device
Ver
Infineon Technologies
650V CoolMOS™ C7 Power Device ( Rev : 2020 )
Ver
Infineon Technologies
650V CoolMOS™ C7 Power Device
Ver
Infineon Technologies
650V CoolMOS™ C7 Power Device
Ver
Infineon Technologies
650V CoolMOS™ C7 Power Transistor
Ver
Infineon Technologies
650V CoolMOS™ C7 Power Transistor ( Rev : 2013 )
Ver
Infineon Technologies
650V CoolMOS™ C7 Power Transistor ( Rev : 2013 )
Ver
Infineon Technologies

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